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GaN vs Silicon Charger Efficiency & Thermal Analysis
We benchmarked six chargers across three semiconductor technologies: traditional silicon MOSFETs, GaN Systems GS-065, and Navitas GaNFast NV6117. Testing covered 65W, 100W, and 140W sustained loads with Yokogawa WT310E power analyzers.
Efficiency at Different Load Points
| Charger | Tech | 65W η | 100W η | 140W η |
|---|---|---|---|---|
| Apple 140W | GaN | 94.2% | 93.1% | 92.8% |
| Anker 737 | GaN | 93.8% | 92.9% | 91.5% |
| Baseus 100W | GaN | 92.5% | 91.2% | 89.8% |
| Generic 65W Si | Silicon | 89.1% | 87.3% | N/A |
| Amazon Basics 65W | Silicon | 88.5% | 86.9% | N/A |
Thermal Performance (30-Minute Sustained Load)
All measurements taken with FLIR T540 IR camera at 30cm distance. Thermal images captured at 10-minute intervals.
| Charger | 65W T_max | 100W T_max | 140W T_max |
|---|---|---|---|
| Apple 140W | 42°C | 51°C | 58°C |
| Anker 737 | 45°C | 54°C | 62°C |
| Generic 65W Si | 68°C | 78°C | N/A |
Power Factor & Harmonic Distortion
EN 61000-3-2 Class D limits: PF > 0.9, THD < 32% at full load.
- Apple 140W: PF = 0.97, THD = 8.2% (Class A compliant)
- Anker 737: PF = 0.96, THD = 11.5% (Class A compliant)
- Generic Si: PF = 0.89, THD = 28.7% (Marginal, near Class D limit)
GaN Advantages Observed
GaN chargers demonstrated 4-6 percentage points higher efficiency across all load points. The key thermal benefit: GaN devices switch at 2-5MHz (vs 50-100kHz for Si), enabling smaller magnetics and reduced switching losses. The Apple 140W charger maintained sub-60°C operation even at full 140W EPR output.
Tested with Yokogawa WT310E, FLIR T540, and Rigol DP832A. Calibrated equipment. Ambient 23°C ±1°C.